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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Switching regulator applicaition. *High voltage switching application. *High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE 500 400 7 10 5 100 UNIT V V .cn mi e V IC Collector Current-Continuous A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 1mA; IE= 0 IC= 10mA; IB= 0 IE= 1mA; IC= 0 IC= 5A; IB= 0.5A B 2SC2650 MIN 500 400 7 TYP. MAX UNIT V V V 1.5 2.0 100 1 V V A IC= 5A; IB= 0.5A B Switching Times tr tstg tf Rise Time Storage Time Fall Time w w. w .cn mi cse is VCB= 400V ; IE= 0 VEB= 7V ; IC= 0 IC= 5A ; VCE= 5V 10 IC= 5A; IB1= -IB2= 0.5A; RL= 40; VCC= 200V; Duty Cycle1% mA 1.0 2.5 1.0 s s s isc Websitewww.iscsemi.cn 2 |
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